High Thermal Conductivity DPAK (TO-252AA) SiC Diode

Lus piav qhia luv luv:

Ntim Cov Qauv: DPAK (TO-252AA)

Taw qhia: YUNYI DPAK (TO-252AA) SiC Diode, uas yog tsim los ntawm cov khoom siv silicon carbide, muaj cov thermal conductivity siab thiab muaj peev xwm hloov tau cov cua sov, zoo dua rau kev txhim kho lub zog ntom ntom ntawm cov khoom siv hluav taws xob, yog li nws tsim nyog rau ntau yam ua haujlwm nyob rau hauv ib puag ncig kub. Lub siab tawg lub zog ntawm SiC diodes ua rau kom muaj zog tiv taus thiab txo qhov loj me, thiab lub zog hluav taws xob hauv hluav taws xob siab ua kom lub zog tawg ntawm cov khoom siv hluav taws xob semiconductor. Nyob rau tib lub sijhawm, vim qhov nce ntawm cov hluav taws xob tawg lub zog, thaum nce qhov impurity nkag mus rau qhov ntom ntom, qhov dav dav ntawm thaj tsam drift ntawm SiC diode lub zog hluav taws xob tuaj yeem txo, kom qhov loj ntawm lub zog hluav taws xob. tuaj yeem txo.

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Qhov zoo ntawm YUNYI's DPAK (TO-252AA) SiC Diode:

1. Cov nqi sib tw nrog cov qib siab zoo

2. Kev ua haujlwm siab ntau lawm nrog lub sijhawm luv luv

3. Qhov loj me, pab txhim kho qhov chaw ntawm lub rooj tsav xwm Circuit Court

4. ruaj khov thiab txhim khu kev qha nyob rau hauv ntau yam ntuj tsim

5. Tus kheej tsim qis-tsawg nti

Cov txheej txheem ntawm Chip Production:

1. Mechanically Printing (Super-precise automatic wafer printing)

2. Tsis Siv Neeg Thawj-etching (Tsis Siv Neeg Etching Khoom, CPK> 1.67)

3. Tsis Siv Neeg Polarity Test (Precise Polarity Test)

4. Tsis siv neeg los ua ke (Tus kheej tsim tsis siv neeg Precise Assembly)

5. Soldering (Kev tiv thaiv nrog kev sib xyaw ntawm Nitrogen & Hydrogen Vacuum Soldering)

6. Tsis Siv Neeg Thib Ob-etching (Tsis Siv Neeg Thib Ob-etching nrog Ultra-ntshiab Dej)

7. Tsis Siv Neeg Gluing (Uniform Gluing & Precise Calculation is Realized by Automatic Precise Gluing Equipment)

8. Tsis Siv Neeg Thermal Test (tsis siv neeg xaiv los ntawm Thermal Tester)

9. Tsis siv neeg Test (Multifunctional Tester)

Parameter ntawm cov khoom:

Tshooj Naj Npawb	Pob	VRWM V	IO A	IFZM A	IR µ ua	V_F V
ZICRD5650	DPAK	650	5	60	60	2
ZICRD6650	DPAK	650	6	60	50	2
Z3D06065E	DPAK	650	6	70	3 (0.03 feem pua)	1.7 (1.5 hli)
ZICRD10650CT	DPAK	650	10	60	60	1.7
ZICRD10650	DPAK	650	10	110	100	1.7
ZICRD101200	DPAK	1200	10	110	100	1.8
ZICRD12600	DPAK	600	12	50	150	1.7
ZICRD12650	DPAK	650	12	50	150	1.7
Z3D03065E	DPAK	650	3	46	2 (0.03 feem pua)	1.7 (1.4 yam)
Z3D10065E	DPAK	650	10	115	40 (0.7 feem pua)	1.7 (1.45 feem pua)
Z4D04120E	DPAK	1200	4	46	200 (20 yam)	1.8 (1.5 hli)
Z4D05120E	DPAK	1200	5	46	200 (20 yam)	1.8 (1.65 yam)
Z4D02120E	DPAK	1200	2	44	50 (10 yam)	1.8 (1.5 hli)
Z4D10120E	DPAK	1200	10	105	200 (30 yam)	1.8 (1.5 hli)
Z4D08120E	DPAK	1200	8	64	200 (35 feem pua)	1.8 (1.6 yam)
Z3D10065E2	DPAK	650	10	70 (rau ib ceg)	8 (0.002 yam) (ib ceg)	1.7 (1.5 yam) (ib ceg)